Ion Implantation implanting ions, usually boron, phosphorus or arsenic, into selected areas of the silicon wafer to alter its electrical properties. Ion implantation may be performed typically ten to 24 times in the manufacture of ICs. For example, ion implantation creates the positively- and negatively-doped regions used to create each of the millions of transistors on each integrated circuit. It is also used to adjust the voltage (threshold voltage) at which the transistors will turn on. Our Therma-Probe product is a standard metrology tool for these ion implantation processes

EX-10.36 6 f09456exv10w36.htm EXHIBIT 10.36 exv10w36
 

Exhibit 10.36

COMPENSATION FOR OUTSIDE BOARD MEMBERS
(As approved by the Compensation Committee & Board 3/25/04)

Proposed

                         
            Attend in     Attend by  
    Now     Person     Phone  
Annual Retainer (Base)
  $ 15,000     $ 15,000          
Committee Chairman (extra)
            2,500          
Committee Secretary (extra)
            2,500          
Regular Meeting Fee
  $ 1,000       2,500     $ 1,500  
Spec. Committee or Board mtg
                       
(if separate from regular BOD mtg)
            1,500       500  
         
Options Granted Upon Joining BOD
    20,000  
Option Grants yearly thereafter
    10,000  

Total likely Board Compensation (calculated)

                 
    Min     Max  
Base Retainer
  $ 15,000     $ 15,000  
Committee Chairman or Secretary (extra)
    0       2,500  
Meeting fees (4 to 6 x $2,500)
    10,000       15,000  
Committee meetings (1 to 4 x $1,500)
    1,500       6,000  
Special BOD or Committee Meetings (2)
    1,000       3,000  
 
           
 
  $ 27,500     $ 41,500